Artificial Plasmonics for VLSI Interconnects

Build the microchips of the future with this revolutionary new information transfer technology Advancements in high-performance computing have continually demanded for progress in disruptive technological research and innovations. Moore’s Law has pushed the Very Large Scale Integration (VLSI) technology to pack MOS devices inside a chip at an exponential rate, thereby surpassing now eight billion transistors per cm2. This has concomitantly fueled the growth of multilayered on-chip interconnects comprising metallic and low dielectric materials.

Artificial Plasmonics for VLSI Interconnects introduces a new method for improving chip performance by harnessing the power of information transfer among chips at terahertz frequency. This revolutionary new electromagnetic wave engineering, called a spoof surface plasmon polariton, adapts the principles of VLSI and terahertz interconnect technology along with the artificial plasmonics to transfer huge quantities of data at vastly improved speeds. It constitutes a potentially decisive contribution to the pursuit of faster and more capacious VLSI chips.

In Artificial Plasmonics for VLSI Interconnects, readers will also find: A cutting-edge new approach supported by pioneering researchDetailed discussion of essential components related to the development of THz interconnect technology, including theory, modeling, simulation, and validationRoadmap to future technological development in the branch of artificial plasmonics Artificial Plasmonics for VLSI Interconnects is ideal for engineers, researchers, and scientists working in electronics, electromagnetics, and optics.